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Autor: Chulwoo Kim
ISBN-13: 9783319023809
Einband: Taschenbuch
Seiten: 88
Gewicht: 1591 g
Format: 239x154x10 mm
Sprache: Englisch

High-Bandwidth Memory Interface

SpringerBriefs in Electrical and Computer Engineering
4
An introduction to high-speed DRAM.- An I/O Line Configuration and Organization of DRAM.- Clock generation and distribution.- Transceiver Design.- TSV Interface for DRAM.
3
This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.
Autor: Chulwoo Kim
ISBN-13:: 9783319023809
ISBN: 3319023802
Verlag: Springer, Berlin, Springer International Publishing
Gewicht: 1591g
Seiten: 88
Sprache: Englisch
Auflage 2014
Sonstiges: Taschenbuch, 239x154x10 mm, 50 SW-Abb., 41 Farbabb., 8 Tabellen, 1 Farbtabellen